Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.91: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
Influence of an in-plane electric field on the photoluminescence of single InGaAs/GaAs quantum dots — •Moritz Vogel1, Sven M. Ulrich1, Lijuan Wang2, Armando Rastelli2, Oliver G. Schmidt2, and Peter Michler1 — 1Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany — 2Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
We present a systematic investigation of the quantum confined Stark effect in (In,Ga)As/GaAs quantum dots. For this purpose lateral static electric fields have been applied via lithographically defined Schottky contact structures on top of our low-density sample structures. The quantum dots were cooled to 4 K and optically pumped using a cw or a mode-locked Ti:Sapphire laser with a repetition rate of 76 MHz and a pulse width of 2 ps tuned to 800 nm. We adopt the technique of scanning Fabry-Perot interferometry to perform high-resolution spectroscopy on the biexcitonic (XX) and excitonic (X) radiative transitions. From studies on numerous quantum dots we typically observe narrow emission lines with a full width at half maximum as low as 13 *eV which is significantly below the resolution limit provided by conventional single-stage spectrometers. Within a small bias range a strong nonlinear dependence of the emission energy due to the quantum-confined Stark effect has been observed which allows for a stable and reversible control of the emission energy. In conjuction with field-dependent measurements, the polarization properties of the emission will also be discussed.