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Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.94: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

Highly resonant Raman spectroscopy of InAs quantum dots — •Tim Köppen, Thomas Brocke, Tobias Kipp, Andreas Schramm, Christian Heyn, and Detlef Heitmann — Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung der Universität Hamburg, Jungiusstraße 11, 20355 Hamburg, Germany

We investigate the electronic properties of InAs quantum dots grown with Indium flush technique [1] using resonant inelastic light scattering. These quantum dots allow for highly resonant excitation with near-infrared laser light near the E0 gap. Photoluminescence measurements show this gap to be at approximately 1.2 eV. In previous Raman experiments on InAs quantum dots grown without flush technique we used the E0 + Δ gap (∼ 1.65 eV) for resonant excitation [2]. With technical improvements and the stronger resonance we get an increase in the electronic Raman signal of a factor of ∼ 250. We now observe signatures of single quantum dots in our spectra.

This project is supported by the Deutsche Forschungsgemeinschaft via SFB 508 “Quantenmaterialien".

[1] S. Fafard et al., Phys. Rev. B 59, 15368

[2] T. Brocke et al., Phys. Rev. Lett. 91, 257401

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