Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 7: Quantum dots and wires: Optical properties I
HL 7.5: Vortrag
Montag, 27. März 2006, 11:15–11:30, POT 151
InP-Quantum Dots in AlGaInP — •Wolfgang-Michael Schulz1,2, Robert Rossbach1,2, Michael Jetter1,2, and Peter Michler2 — 14th Physics Institute, University Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany — 25th Physics Institute, University Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany
In recent years low dimensional structures have attracted great interest in research and device fabrication because of the strong change in the density of states and the associated effects. One major issue of the quantum dots (QDs) is the emission at elevated temperatures, especially for further applications towards single-photon devices in the visible spectral range. The InP-material system can fulfill these requirements. Therefore, to achieve a high electron confinement we grew InP-QDs embedded in high band gap AlGaInP. The samples were structurally investigated by atomic force microscopy as well as optically by power-, temperature-dependent and time-resolved photoluminescence. By analysing the temperature behaviour we found that even at high aluminum containing barriers the carriers can only escape to the direct Γ-band of the AlGaInP. We could also observe single-photon emission in the wavelength range from 670 nm up to 565 nm.