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Dresden 2006 – scientific programme

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MA: Magnetismus

MA 2: Magnetic Thin Films I

MA 2.7: Talk

Monday, March 27, 2006, 11:45–12:00, HSZ 03

Magnetic anisotropy of Ga1−xMnxAs on GaAs (311)A — •Christoph Bihler1, Hans Huebl1, Dieter Schlosser1, Martin S. Brandt1, Sebastian T. B. Goennenwein2, Matthias Reinwald3, Ursula Wurstbauer3, Matthias Döppe3, Dieter Weiss3, and Werner Wegscheider31Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany — 2Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Str. 8, 85748 Garching, Germany — 3Universität Regensburg, 93040 Regensburg, Germany

One approach to further improve the magnetic properties of Ga1−xMnxAs epilayers via optimized dopant incorporation is growth on higher index GaAs substrates. In this contribution we investigate the magnetic anisotropy of Ga1−xMnxAs grown by low-temperature molecular beam epitaxy (LT-MBE) on GaAs (311)A substrates by means of ferromagnetic resonance (FMR) spectroscopy. The angular dependence of the resonance fields observed can be explained by two main contributions to the magnetic anisotropy: a cubic magnetic anisotropy field 2KC1/M=240 mT oriented along the crystallographic ⟨001⟩ axes caused by the symmetry of the GaAs host lattice, and an effective uniaxial magnetic anisotropy field 2Keff311/M=90 mT along [311] presumably caused by the homoepitaxial growth of the layer. Even better agreement between simulation and experiment is obtained if additional uniaxial anisotropies along [100] and [233] are taken into account.

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