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MA: Magnetismus

MA 20: Poster: Films(1-36) Transp(37-56) Ex.Bias(57-67) Spindyn(68-80) Micromag(81-95) Particle(96-109) Imag.+Surface(110-113) Spinelectr(114-122) Theory+Micromag(123-131) Spinstr+Aniso(132-142) MagMat(143-156) Meas(157,158) MolMag+Kondo(159-162) Postdead(163-)

MA 20.51: Poster

Tuesday, March 28, 2006, 15:15–19:15, P1

Characterization and optimization of magnetic tunnel junctions with ultrathin barriers — •G. Eilers, A. Parge, and M. Münzenberg — IV. Phys. Inst., Universität Göttingen

Ultrathin barriers can provide extremely high tunnel current densities, which are required for spin current induced switching experiments. For future MRAMs with high read and write performance a high room-temperature tunnelling magnetoresistance (TMR) is also necessary.

We have prepared magnetic tunnel junctions (MTJs) with either plasma oxidized AlOx tunnel barriers or MgO tunnel barriers by means of e-beam evaporation of stoichiometric MgO. Besides, the barrier thickness and its lateral size (structured by shadow masks) were varied. Aim is to correlate structurel defects, especially important for ultrathin barriers, with the transport properties.

After the optimization of the growth parameters and characterizing the transport properties (I/V characteristics, TMR at different temperatures) we are planning to integrate the MTJs into a strip line with a photoconductive switch in order to study the spin current induced switching effect.