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Verhandlungen
DPG

Dresden 2006 – scientific programme

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O: Oberflächenphysik

O 29: Poster session II (Nanostructures, Magnetism, Particles and clusters, Scanning probe techniques, Time-resolved spectroscopy, Structure and dynamics, Semiconductor surfaces and interfaces, Oxides and insulators, Solid-liquid interfaces)

O 29.69: Poster

Wednesday, March 29, 2006, 14:30–17:30, P2

SiC Pore Surfaces: Surface Studies of 4H-SiC(1102) and 4H-SiC(1102) — •U. Starke1, W.Y. Lee1, M. Hetzel1, C. Virojanadara1, C. Coletti2, S.E. Saddow2, R.P. Devaty3, and W.J. Choyke31Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany — 2University of South Florida, Tampa, USA — 3University of Pittsburgh, USA

Porous SiC has shown intriguing perspectives for a variety of possible applications in electronics, sensors, fuel cells and bio-technology. One important pore type found is a triangular shaped channel with surfaces inclined by about 62 with respect to SiC(0001). The respective single crystal surface, 4H-SiC(1102), and its isomorphic opposite, i.e. the 4H-SiC(1102) surface have been studied in this work using AFM, LEED, STM and AES. The mechanically polished samples were etched in hydrogen flux at about 1500C which eliminates the polishing damage as monitored by AFM. Both surfaces immediately display a sharp LEED pattern of bulk-like periodicity. An apparent thin oxide layer termination is inferred from AES. Further annealing in UHV leads to the removal of oxygen after flashing to about 1200C. Si deposition and subsequent annealing lead to a well ordered surface with the best LEED pattern obtained after heating to about 1120 and 1000C, respectively. Also the Si/C composition ratio increases up to this temperature regime until it drops at higher temperatures. A tendency towards a (2×1) reconstruction is observed. The interpretation of LEED spot intensity curves indicates a different structure for the UHV treated surface as compared to the ’as-etched’ surface condition.

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