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DPG

Regensburg 2007 – scientific programme

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DS: Fachverband Dünne Schichten

DS 15: Poster Session

DS 15.56: Poster

Tuesday, March 27, 2007, 15:00–17:00, Poster B

Controlled ion bombardment during sputter-deposition of thin films — •Evelyn Scheer, Dominik Köhl, Daniel Severin, and Matthias Wuttig — I. Physikalisches Institut, RWTH-Aachen, D-52056 Aachen

We present a setup that enables the in-situ bombardment of growing films with ions from a broad-beam ion source. An additional ion source has been mounted to an existing sputter-chamber such that simultaneous bombardment during deposition is possible at an angle of incidence of 45 with respect to the substrate normal. The ion source can be operated with various gases. This allows a detailed study of the film growth. Thereby the ion energy can be varied between 100 eV up to 2 keV with ion current densities of up to 100 µA/cm2.

Various techniques, such as x-ray diffraction, x-ray reflectometry, spectroscopic ellipsometry and electrical measurements, have been employed to investigate the effects of the bombardment. A correlation between film properties and the deposition parameters such as ion flux and ion energy provides the means for tailoring films with desired functionalities.

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