Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 17: Contact Properties (SYOE 10)
DS 17.5: Vortrag
Mittwoch, 28. März 2007, 18:15–18:30, H32
Structure and growth of organic-organic heterojunctions elucidated by in-situ X-ray diffraction studies — •Esther Barrena1, 2, Dimas G. de Oteyza1, Jusep Ossó3, Stefan Sellner1, and Helmut Dosch1,2 — 1Max-Planck-Institut für Metallforschung — 2Institut für Theoretische und Angewandte Physik, Universität Stuttgart — 3Institut de Ciència de Materials de Barcelona
Although numerous studies have been devoted to the characterization and optimization of the performance of p-n organic-organic heterojunctions-based devices, the present-day knowledge on the physical principles of the growth of organic heterostructures is still poor. By combining atomic force microscopy with surface-sensitive X-ray diffraction, we have been able to get a detailed in-situ insight into the microscopic processes which take place during the growth of p-conducting di-indenoperylene (DIP) molecules onto n-conducting copper-hexadecafluorophtalocyanine (F16CuPc) thin films. We demonstrate the self-organization of well-ordered DIP nanodots with high crystallinity and show that their growth is intimately related to a novel type of interface reconstruction of the underlying F16CuPc film which affects three monolayers adjacent to the organic p-n interface. In spite of the close resemblance to the formation of semiconductor nanostructures for inorganic heteroepitaxy, the present results conclusively demonstrate a distinctly different growth mechanism for organic heteroepitaxy whose understanding demands further theoretical studies.
E. Barrena, D. G. de Oteyza, S. Sellner, H. Dosch, J. O. Osso, and B. Struth Physical Review Letters 97, 076102-1-4 (2006)