Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 19: Symposium: In situ Optics II
DS 19.2: Hauptvortrag
Mittwoch, 28. März 2007, 17:45–18:15, H34
In-situ investigations of electronic and structural properties of Si surfaces during electrochemical surface functionalization — •Jörg Rappich1, Florent Yang1, Katy Roodenko2, Aleix Güell3, Carl Matthias Intelmann1, Thomas Dittrich4, and Karsten Hinrichs2 — 1Hahn-Meitner-Institut Berlin GmbH, Abt. SE1, Kekuléstr. 5, 12489 Berlin — 2ISAS - Institute for Analytical Sciences, Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin — 3Department of Physical Chemistry, University of Barcelona, C/Martí i Franquès, 1, E-08028 Barcelona (Spain) — 4Hahn-Meitner-Institut Berlin GmbH, Abt. SE2, Glienicker Str. 100, 14109 Berlin
In-situ investigations of Si surfaces are of high scientific relevance in order to understand the electrochemical surface processing during oxide formation and etch-back, the transformation towards H-termination and grafting of organic molecules on (111) and (100) oriented surfaces. These surface modifications have an impact on the electronic surface properties such as surface recombination velocity and band-bending. For characterisation of electronic properties and identification of changes in the type of surface species pulsed photoluminescence, pulsed photo-voltage and infrared spectroscopic measurements (multiple and single reflection geometry) have been applied. Experimental results are discussed with respect to surface passivation, structural modification and functionalization.