Regensburg 2007 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 21: Symposium: Real Time Growth Studies II

DS 21.2: Hauptvortrag

Donnerstag, 29. März 2007, 12:00–12:45, H32

Growing metals on silicon surfaces - STM study in-vivo — •Ivan Ošťádal, Pavel Sobotík, Pavel Kocán, and Jan Pudl — Faculty of Mathematics and Physics, Department of Electronics and Vacuum Physics, Charles University in Prague, V Holešovičkách 2, 180 00 Praha 8, Czech Republic

Scanning tunneling microscopy (STM) was used for direct imaging early stages of heteroepitaxial growth of Ag and In on silicon surfaces during deposition by vacuum evaporation. An experimental arrangement used for such STM in-vivo measurements is presented and discussed. Image sequences showed the behavior of single metal adatoms after arriving on the Si(111)7 × 7 surface and formation of metal clusters at room and higher temperatures. The data revealed a kind of long range interaction among metal adsorbate [1]. STM cannot image individual, highly mobile, metal adatoms on the the Si(100)2 × 1 surface at room temperature but dynamics of metal chains growth and decay can be recorded with a single atom resolution. The chains composed of metal adatom dimers form surface structures with morphology given by a type of metal. In-vivo measurements indicate substantial role of surface C-type defects at metal adatom nucleation [2]. The STM data are discussed with respect of models used for kinetic Monte Carlo simulations of the growth.

[1] I. Ošťádal, P. Kocán, P. Sobotík, J. Pudl, Phys. Rev. Lett. 95 (2005) 146101

[2] P. Kocán, I. Ošťádal, P. Sobotík, Surf. Sci. 600 (2006) 3928; P. Kocán, P. Sobotík, and I. Ošťádal, Phys. Rev. B 74 (2006) 037401