Regensburg 2007 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 13: Poster 1

HL 13.31: Poster

Montag, 26. März 2007, 15:00–17:30, Poster A

Laser-induced nonthermal melting in InSb: What is the mechanism? — •Waldemar Töws, Christian Sippel, Christian Gilfert, Jessica Walkenhorst, Eeuwe Sieds Zijlstra, and Martin Garcia — Theoretische Physik, Fachbereich Naturwissenschaften, Universität Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany

A recent experiment [A. M. Lindenberg et al., Science 308, 392 (2005)] performed on InSb suggests that ultrafast laser-induced nonthermal melting occurs due to a flattening of interatomic potentials. This study was based on Debye-Waller theory, applied in the time-domain and for non-equilibrium processes. We analyzed the nonthermal melting of InSb by using (i) first-principles electronic structure calculations for the interatomic potentials (ii) dynamical models to find the structure factors under different nonequilibrium conditions. Combining the two methods mentioned above we discuss the different possible scenarios for the lattice dynamics during the first 100 fs after the laser excitation.