Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 32: C/diamond
HL 32.5: Talk
Wednesday, March 28, 2007, 17:30–17:45, H14
Electronic and optical properties of diamond/organic semiconductor heterostructures — •Wojciech Gajewski1, Jose Garrido1, Martin Niedermeier1, Oliver Williams2, Ken Haenen2, and Martin Stutzmann1 — 1Walter Schottky Institute, TU München, Am Coulombwall 3, 85748 Garching, Germany — 2Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek, Belgium
Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5-methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO2 were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70 - 400K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogenity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.