Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 4: Semiconductor Laser I
HL 4.8: Vortrag
Montag, 26. März 2007, 12:30–12:45, H13
Amplified hybrid-mode-locked semiconductor laser in an external cavity with intracavity dispersion control — •Tobias Schlauch1, Tuyen Le1, Stefan Hoffmann1, Martin Hofmann1, Andreas Klehr2, and Götz Erbert2 — 1AG Optoelektrische Bauelemente und Werstoffe, Ruhr Universität Bochum, D-44780 — 2Ferdinand Braun Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Laser diodes are attractive sources for short pulse generation. Due to their compactness and cost effectiveness, they could be a very promising alternative to the conventional complex and expensive optically pumped short pulse lasers. However, though the gain bandwidth of laser diodes is sufficient for the generation of sub -- 100fs pulses, pulses below 1ps are rather difficult to achieve in practice. Critical for shorter pulses is the significant chirp caused by the strong coupling of real and imaginary part of the susceptibility in the semiconductor. While optically pumped solid state femtosecond lasers contain elements for intracavity dispersion control, this concept is rarely used in short pulse diode lasers. We present an approach of an amplified hybrid-mode-locked two-section laser diode in an external cavity. The cavity contains elements which enable spatial separation of the spectral components. A spatial light modulator is used to control phases and amplitudes of the individual spectral components.