Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 51: GaN: preparation and characterization
HL 51.1: Talk
Friday, March 30, 2007, 11:00–11:15, H13
GaN-based devices on 150 mm Si(001) substrate grown by MOVPE — •F. Schulze1, A. Dadgar1,2, A. Krtschil1, O. Kisel1, T. Hempel1, J. Bläsing1, C. Hums1, A. Diez1, L. Reißmann1, J. Christen1, and A. Krost1,2 — 1Otto-v.-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg — 2AZZURRO Semiconductors AG, Universitätsplatz 2, 39106 Magdeburg
The Si(001) orientation offers an obvious approach for the monolithic integration of GaN-based electronics and optoelectronics with standard silicon technology, because this substrate orientation is used in mainstream CMOS technology. However, the main challenges are the different lattice symmetries and crystallographic orientations of GaN and Si(001). We present structural and optical investigations on GaN layers on Si(001) grown by metalorganic vapour phase epitaxy (MOVPE). A key parameter to obtain high quality GaN layers on Si(001) is most likely the control of the surface reconstruction of the substrate, which can be influenced by changing the surface energy. The use of 4∘ off-oriented substrates prefers one type of dimer rows, and thus, the growth of c-axis oriented GaN on Si(001) with one defined in-plane alignment is possible. The crystallographic quality is investigated by x-ray diffraction measurements, Electron Back Scatter Diffraction, FE-SEM imaging, and AFM. By growing an approximately 2.8 µm thick, crack-free GaN buffer, the achieved crystallographic quality allows for fabricating GaN-based LEDs and FET devices on Si(001). Furthermore, we will present some first blue LED samples of the upscaling process up to 150 mm Si(001) substrates.