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HL: Fachverband Halbleiterphysik
HL 51: GaN: preparation and characterization
HL 51.10: Vortrag
Freitag, 30. März 2007, 13:15–13:30, H13
Piezoelectric Fields in Semipolar GaInN/GaN Quantum Wells — •Martin Feneberg1, Frank Lipski1, Klaus Thonke1, Rolf Sauer1, Thomas Wunderer2, Peter Brückner2, and Ferdinand Scholz2 — 1Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm — 2Institut für Optoelektronik, Universität Ulm, 89069 Ulm
Piezoelectric fields lower the efficiency of GaInN/GaN quantum well devices via the Quantum Confined Stark Effect (QCSE). To circumvent the problems introduced by the QCSE, growth on nonpolar or semipolar crystal planes can be used. We investigate the piezoelectric field strength on {1-101} semipolar facets of selectively grown GaN stripes by voltage-dependent photoluminescence. We find a reduced piezoelectric field of about -0.1 MV/cm on the semipolar facet compared to about -1.85 MV/cm on a structure grown on the polar {0001} plane for GaInN layers with 15% and 10% indium content, respectively[1]. The indium composition dependence of the piezoelectric field is evaluated and the results are compared to theoretical values of the piezoelectric tensor elements reported in the literature.
[1] Feneberg et al., Appl. Phys. Lett. 89, 242112 (2006).