Regensburg 2007 – scientific programme

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MA: Fachverband Magnetismus

MA 15: Poster:ThinFilms(1-33),Transp.(34-49),ExchBias(50-56),
Spindynamics(57-70),Micro-nanostr.Mat.(71-82),
Particles/Clust.(83-88), Mag.Imag./Surface(89-96),
Spinelectronics(97-109), Theory/Micromag.(110-116),
Spinstruct/Phasetr.(117-128),Magn.Mat.(129-139),
Aniso.+Measuring(140-145), MolMag.(146-152),
MSMA(153-156)

MA 15.39: Poster

Tuesday, March 27, 2007, 15:00–19:00, Poster A

AlZr tunnel barriers in magnetic tunnel junctions — •Andrea Niemeyer¹, Andy Thomas¹, Hubert Brückl², and Günter Reiss¹ — ¹Bielefeld University, Thin Films & Nanostructures, Bielefeld, Germany — ²ARCS research GmbH, Nano System Technologies, Vienna, Austria

Magnetic tunnel junctions are due to various possible applications interesting for research and development. Different electrode and barrier materials were used for preparation. During the last ten years the most commonly used barrier material was aluminum oxide. AlZr compositions form a very homogenous and amorphous barrier which is important for a good quality tunneling barrier. This might as well lead to higher tunneling magneto resistance. CoFeB as an electrode material provides high tunneling magneto resistance, about 70% at room temperature with commonly used aluminum oxide. The combination of CoFeB and a Zr alloyed barrier promises even higher TMR amplitudes. The magnetoresistance was measured in dependence on the barrier thickness for several AlZr alloy compositions.