Regensburg 2007 – scientific programme
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O: Fachverband Oberflächenphysik
O 17: Poster Session I (Nanostructures at Surfaces; Metal Substrates: Epitaxy and Growth; Methods: Scanning Probe Techniques; Phase Transitions)
O 17.16: Poster
Monday, March 26, 2007, 17:30–20:30, Poster C
Investigation of hafnium silicide nano structures on a Si(100) surface by means of photoelectron diffraction — •C.R. Flüchter1,2, D. Weier1,2, A. de Siervo3, M. Schürmann1, A. Beimborn1, F. Schönbohm1, S. Dreiner1, M.F. Carazzolle4, R. Landers3,4, G.G. Kleiman4, and C. Westphal1,2 — 1Experimentelle Physik 1 - Universität Dortmund, — 2DELTA - Universität Dortmund, Maria-Goeppert-Mayer-Str. 2, D 44227 — 3Laboratório Nacional de Luz Síncrotron, C.P. 6192, — 4Inst. de Fisica - Universidade Estadual de Campinas,
Ultrathin films of hafnium were deposited on a silicon sample and
annealed at 750∘C forming rectangular shaped hafnium silicide
islands on the surface. This silicidation process causes the
thermal instability of HfO2 films on silicon substrates. The
latter system is under investigation in the field of high-k
dielectrics to replace the system SiO2/Si(100) in MOSFET
devices [1]. We investigated the structure of the HfSi2 island
for different initial film thicknesses of hafnium by means of
atomic force microscopy, photoelectron spectroscopy and
photoelectron diffraction. Synchrotron light in the soft X-ray
regime (hν=180 eV) was used for excitation. The resulting
diffraction patterns were compared to calculated patterns of model
structures by an R-factor analysis. As a result, we propose a
modified zirconium silicide model to describe the
structure of the system.
[1] C. J. Först, C.R. Ashman, K. Schwarz, and P.E. Blöchl, Nature
427, 53 (2004)