Regensburg 2007 – scientific programme
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O: Fachverband Oberflächenphysik
O 24: Semiconductor Substrates: Epitaxy and Growth
O 24.5: Talk
Tuesday, March 27, 2007, 12:15–12:30, H39
Self-organized thickness engineering of Al thin films by alternation of dense and diluted atomic layers — •Ying Jiang1,2, Kehui Wu1, Zhe Tang1, Philipp Ebert2, and Enge Wang1 — 1Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China — 2Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
We studied the growth of Al on Si(111)-√3x√3 -Al substrates by scanning tunneling microscopy and low energy electron diffraction. We found that the Al film grown on an atomically sharp Al/Si interface exhibits of a superlattice structure of alternating densely-packed (1x1) and loosely-packed (likely √3x√3) atomic layers, at film thicknesses < 0.9 nm. Above 0.9 nm Al starts to grow in the normal stacking of Al(111) layers. The phenomenon is explained within the theory of the quantum size effects in a jellium metal combined with strain effects.