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Regensburg 2007 – scientific programme

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O: Fachverband Oberflächenphysik

O 24: Semiconductor Substrates: Epitaxy and Growth

Tuesday, March 27, 2007, 11:15–12:45, H39

11:15 O 24.1 Ultrafast Electron Diffraction of epitaxial Bi(111) films on Si(001) — •Anja Hanisch, Boris Krenzer, and Michael Horn-von Hoegen
11:30 O 24.2 Lattice accommodation by a periodic array of interfacial misfit dislocations in Bi(111)/Si(001) heteroepitaxy — •Giriraj Jnawali, Hichen Hattab, Frank M. zu Heringdorf, Boris Krenzer, and Michael Horn von Hoegen
11:45 O 24.3 Symmetry breaking in the growth of 2D Ge islands on Bi/Si(111) — •Konstantin Romanyuk and Bert Voigtländer
12:00 O 24.4 Epitaxial growth of Aluminium on Silicon (111) studied by SPA-LEED and STM — •Thomas Payer, Christian Wiethoff, and Michael Horn-von Hoegen
12:15 O 24.5 Self-organized thickness engineering of Al thin films by alternation of dense and diluted atomic layers — •Ying Jiang, Kehui Wu, Zhe Tang, Philipp Ebert, and Enge Wang
12:30 O 24.6 Untersuchung der Homoepitaxie auf GaAs(001) mit Molekularstrahlepitaxie und in-situ-STM — •Sylvia Hagedorn, Jan Grabowski, Holger Eisele und Mario Dähne
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