Regensburg 2007 – wissenschaftliches Programm
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SYOE: Symposium Organic Thin Film Electronics: From Molecular Contacts to Devices
SYOE 8: Poster Session SYOE
SYOE 8.93: Poster
Dienstag, 27. März 2007, 18:00–20:00, Poster B
Hysteresis in Bio-Organic Field-Effect Transistors — •Stadler Philipp1, Birendra Singh1, Reinhard Schwoediauer2, Siegfried Bauer2, James Grote3, and Serdar Sariciftci1 — 1LIOS Altenbergerstr. 69., 4040 Linz, Austria — 2SOMAP Altenbergerstr. 69., 4040 Linz, Austria — 3AFRL/MLPS, Wright-Patterson Air Force Base, Ohio USA
In organic field effect transistors (OFETs) the gate dielectric plays a crucial role - highly insulating thin film polymer layers are key-components in state of the art organic transistor devices. When replacing the polymer layer by introducing solution-processed thin film surfactant-modified biopolymer Desoxyribonucleic Acid (DNA) as gate dielectric [1], transistor-characteristics are changed towards remanence-like hystheresis behaviours. The hysteresis-loops probed in bio-organic field effect transistors (BiOFETs) derived from DNA and fullerene derivatives form bistable states which can be used for memory devices at low operating voltage regime compared to similar organic thin film transistors using polymers as gate insulator. Bulk-interface interactions have been reported in various space-charge electrets without ferroelectric-like properties and - in the case of DNA - are probed with sandwich devices of pristine biopolymer (Metal-Insulator-Metal) as well as sandwich devices with biopolymer and semiconducting fullerene derivative (Metal-Insulator-Semiconductor-Metal) and bottom gate top electrode OFET devices itself. [1] T. B. Singh et al., Appl. Phys. Lett. 85, 5409 (2004).