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Dresden 2009 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 13: Thin Films and Nanostructures I

DF 13.4: Talk

Wednesday, March 25, 2009, 15:40–16:00, WIL B321

Electrical characterization of ferroelectric tunnel junctions with ferromagnetic electrodes — •Mario Disch1, Adrian Petraru1, Michael Hambe2, Markus Heidelmann1, Martina Luysberg1, Falk Amthor1, Rainer Waser1, Nagarajan Valanoor2, and Hermann Kohlstedt11Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, Jülich, Germany — 2School of Materials Science and Engineering, University of New South Wales, Sydney, Australia

Heterostructures of SrTiO3(substrate)/SrRuO3/BaTiO3/SrRuO3 and NdGaO3(substrate)/LaSr0.67Mn0.33O3/PbZr0.2Ti0.8O3/LaSr0.67Mn0.33O3 were grown by high pressure sputtering and pulsed laser deposition respectively. The BaTiO3 was deposited as wedge-like films. The thickness gradient was determined by transmission electron microscopy and ranged from approximately 1.5 to 3.5 nm. X-ray diffraction indicated epitaxial and fully strained heterostructures. Tunnel junctions and ferroelectric capacitors were fabricated using optical lithography and ion beam etching. The ferroelectric capacitors showed displacement current down to a thickness of about 2 nm of the BaTiO3. Current transport and tunnel magneto resistance were performed down to 10 K and the results will be discussed in the framework of the magneto electric interface effect.

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