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Dresden 2009 – scientific programme

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DS: Fachverband Dünne Schichten

DS 10: Surface Modification

DS 10.5: Talk

Tuesday, March 24, 2009, 12:00–12:15, GER 37

Xe+ ion beam induced rippled structures on Si miscut wafers — •Antje Hanisch1, Jörg Grenzer1, Andreas Biermanns2, and Ullrich Pietsch21Forschungszentrum Dresden-Rossendorf, Dresden, Germany — 2Institute of Physics, University of Siegen, Germany

We report on the influence of the initial roughness and crystallography of the substrate on the formation of self-organized ripple structures on semiconductors surfaces by noble gas ion bombardment. The Bradley-Harper theory predicts that an initial roughness is most important for starting the sputtering process which in the ends leads to the evolution of regular patterns. We produced periodic structures with intermediate Xe+ ion energies (5-70 keV) at different incidence and azimuthal angles which lead to the assumption that also crystallography plays a role at the beginning of ripple evolution. Most of the previous investigations started from the original roughness of a polished silicon wafer. We used (001) silicon wafers with a miscut angle of 1, 5 and 10 towards [110]. We studied the ripple formation keeping the ion beam parallel to the [111], [-1-11] or [-111] direction, i.e. parallel, antiparallel or perpendicular to the miscut direction [110]. The parallel and antiparallel case implies a variation of the incidence angle with increased roughness over the surface step terraces. The perpendicular orientation means almost no roughness. The results were compared to normal Si(001) and Si(111) wafers.

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