Dresden 2009 – scientific programme
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DS: Fachverband Dünne Schichten
DS 16: Poster I
DS 16.25: Poster
Tuesday, March 24, 2009, 09:30–12:30, P5
Reflectance spectroscopy of PMMA implanted with 50 keV silicon ions — •Bojana Florian1, Ivan Stefanov2, and Georgi Hadjichristov3 — 1Bulgarian Institute of Metrology, 2 Prof. P. Mutafchiev Str., 1797 Sofia, Bulgaria — 2Department of Quantum Electronics, Faculty of Physics, Sofia University, 5 James Bourchier Blvd., 1164 Sofia, Bulgaria — 3Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
Recently, the modification of the specular reflectivity of PMMA implanted with low-energy (50 keV) silicon ions was studied and nano-clusters formed in PMMA by Si+ implantation were evidenced by Raman spectroscopy [1] and electrical measurements [2]. Further, the optical loss due to off-specular (diffuse) reflectivity of this ion-implanted polymer is also of practical interest for applications such as micro-optical lenses, diffraction gratings, Fresnel lenses, waveguides, etc.
We examined both specular and diffuse reflectivity of Si+ implanted PMMA in the UV-Vis-NIR. The effect from Si+ implantation in the dose range 1014-1017 ions/cm2 is linked to the structure formed in PMMA where the buried ion-implanted layer has a thickness up to 100 nm. As compared to the pristine PMMA, an enhancement of the reflectivity of Si+ implanted PMMA is observed, that is attributed to the modification of the subsurface region of PMMA upon the ion implantation.
[1] G.B. Hadjichristov, V. Ivanov and E. Faulques, Appl. Surf. Sci. 254, 4820-4827 (2008). [2] G.B. Hadjichristov et al., Org. Electron. 9, 1051-1060 (2008).