Dresden 2009 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 26: Poster II

DS 26.32: Poster

Mittwoch, 25. März 2009, 09:30–12:30, P5

Charge transient spectroscopy measurements of Metal-Oxide-Semiconductor structuresMarkus Arnold1, •Axel Fechner1, Joachim Bollmann2, Bernd Schmidt3, Heidemarie Schmidt3, and Dietrich R.T. Zahn11Chemnitz University of Technology, Semiconductor Physics, 09107 Chemnitz, Germany — 2Freiberg University of Mining and Technology, Institute of Electronic und Sensor Materials, 09596 Freiberg, Germany — 3Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, 01314 Dresden, Germany

Charge transient spectroscopy (QTS) is an electrical measurement method related to deep-level transient spectroscopy (DLTS) developed originally by Lang [1]. Using QTS it is possible to measure fast charge reloading processes even in the absence of depletion regions as a function of time and temperature with different pulse voltages and pulse widths. As a result, one can determine the number and the energetic position of the traps.

Here, we will present QTS measurements on Metal-Oxide-Semiconductors structures Al/SiO2/Si Metal-Oxide-Semiconductor structures and the influence of manganese implantation into p- and n-doped silicon. The results will be compared to C-V and DLTS measurements on the same samples.

[1] D. V. Lang; Deep-level transient spectroscopy: A new method to characterize traps in semiconductors; J. Appl. Phys. 45, 3023 (1974).

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