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Dresden 2009 – scientific programme

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DS: Fachverband Dünne Schichten

DS 8: High-k and low-k dielectrics

Monday, March 23, 2009, 15:00–17:00, WIL B321

15:00 DS 8.1 Dielectric properties of A2/3Cu3Ti4O12 (A = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy) — •Jürgen Sebald, Stephan Krohns, Peter Lunkenheimer, Stefan Riegg, Stefan G. Ebbinghaus, and Alois Loidl
15:20 DS 8.2 Characterization of (SrO)x(ZrO2)(1−x) thin films for use in metal insulator metal capacitors — •Matthias Grube, Oliver Bierwagen, Dominik Martin, Lutz Geelhaar, and Henning Riechert
15:40 DS 8.3 Ternary rare-earth based alternative gate-dielectrics for future integration in MOSFETs — •Jürgen Schubert, Joao Marcelo Lopes, Eylem Durgun Özben, Roman Luptak, Steffi Lenk, Willi Zander, and Martin Roeckerath
16:00 DS 8.4 The deposition of rare-earth oxide ultrathin-films with inorganic precursors — •Maraike Ahlf, Hanno schnars, Oliver Skibitzki, Marvin Zöllner, Katharina Al-Shamery, Mareike Ahlers, and Mathias Wickleder
16:20 DS 8.5 High performance MIM capacitors with Atomic Vapour Deposited HfO2 dielectrics — •Mindaugas Lukosius, Christian Wenger, Christian Walczyk, and Hans-Joachim Müssig
16:40 DS 8.6 Growth investigation of thin Ti-based high-k films — •Andreas Krause, Dominik Martin, Matthias Grube, and Walter M. Weber
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