Dresden 2009 – wissenschaftliches Programm
HL 12.7: Vortrag
Dienstag, 24. März 2009, 11:15–11:30, BEY 81
Observation of tunnel rates of phosphorus dopants using silicon SETs — •H. Huebl1, C. D. Nugroho1, A. Morello1, C. Escott1, C. Yang2, J. van Donkelaar2, A. Alves2, D. Jamieson2, A. S. Dzurak1, R. G. Clark1, and M. Eriksson3 — 1Centre for Quantum Computer Technology, University of New South Wales, Sydney, Australia — 2Centre for Quantum Computer Technology, University of Melbourne, Melbourne, Australia — 3Department of Physics, University of Wisconsin, Madisson, Wisconsin, USA
Charge centres, such as donors in semiconductors, have significant potential for quantum information processing. In silicon, which can be produced nuclear-spin free, phosphorus donors are a prime candidate for implementation of a qubit, due to their long spin coherence times. In this presentation we will discuss a hybrid structure, consisting of implanted phosphorus donors controlled by a gate potential in close vicinity to a gate-induced, MOS-based silicon single electron transistor (Si-SET). We study the dual functionality of the nearby Si-SET as a sensitive charge detector as well as a gate-induced electron reservoir. Experimentally, we observe shifts in the position of the Coulomb peaks of the Si-SET corresponding to 20% of an electron charge. We attribute these shifts to charge transfers between the Si-SET island reservoir and the nearby phosphorus donors. Pulsed voltage spectroscopy on one of these charge transitions allows us to investigate the capture and emission times of a donor resulting in a capture rate of 3000 s−1 and an emission rate of 1000 s−1 corroborating expectations from device modelling.