Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 15: C/diamond I

HL 15.10: Talk

Tuesday, March 24, 2009, 12:00–12:15, POT 51

Raman Spectroscopy of Graphene and Few Layer Graphene in Different Dielectric Environments — •Philipp Klar, Robert Panknin, Cinzia Casiraghi, and Stephanie Reich — Fachbereich Physik, Freie Universität, Berlin, Germany

Graphene is the two-dimensional prototype for carbon allotropes. Recently, graphene has attracted a lot of interest because it shows ballistic transport at room temperature along with chemical and mechanical stability [1]. Raman spectroscopy is a powerful tool to identify graphene and to probe its doping level [2-4]. It has been shown that charged-impurities can strongly affect the electronic properties of graphene, in particular they can limit its mobility [5]. Here we use Raman spectroscopy in order to investigate the effect of different dielectric environments and substrates on the electronic structure of graphene and few layer graphene. Graphene and graphene layers have been obtained by micro mechanical cleavage of graphite and placed on different substrates (silicon covered with 300 nm silicon oxide, glass and calcium fluoride) and in different media with high dielectric constant.

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