Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 22: Focused Session: Semi- and nonpolar group III nitrides II
HL 22.4: Talk
Tuesday, March 24, 2009, 15:45–16:00, BEY 118
Fabrication of high quality semipolar GaN on full 2 inch for green light emitters — •Thomas Wunderer1, Frank Lipski1, Stephan Schwaiger1, Ferdinand Scholz1, Michael Wiedenmann2, Martin Feneberg2, and Klaus Thonke2 — 1Institut für Optoelektronik, Universität Ulm, 89069 Ulm — 2Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm
We present a fabrication method for semipolar GaN planes with high material quality and the possibility for large scale production. Inverse GaN pyramids with semipolar {1-101} and {11-22} planes are formed intentionally on a template masked with different hexagonally ordered patterns. Systematic studies of the 3D GaN growth parameters are performed. By varying the V/III ratio, the temperature, and the pressure during the MOVPE growth big differences in the structural shape of the structures and the homogeneity of their distribution could be observed. As figure of merit an InGaN single quantum well emitting in the blue to green spectral region is grown on the semipolar facets. Optical and scanning electron microscopy (SEM) investigations are combined with photoluminescence (PL) and spatially resolved cathodoluminescence (SEM-CL) measurements. Using the optimized growth conditions a complete LED structure is realized on the 3D surface. First results of electroluminescence measurements with emission in the green spectral region are presented.