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Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 2: GaN: devices

Monday, March 23, 2009, 10:15–12:15, BEY 118

10:15 HL 2.1 Development of InGaN-based thin disk lasers — •R. Debusmann, V. Hoffmann, W. John, O. Krüger, P. Vogt, M. Kneissl, and M. Weyers
10:30 HL 2.2 Wavelength Dependence of Optical Gain and Laser Threshold in InGaN MQW Lasers — •Jessica Schlegel, Jan-Robert van Look, Veit Hoffmann, Arne Knauer, Patrick Vogt, Markus Weyers, and Michael Kneissl
10:45 HL 2.3 Optimization of InGaN multiple quantum wells for blue lasers — •J.R. van Look, J. Schlegel, V. Hoffmann, A. Knauer, S. Einfeldt, M. Weyers, P. Vogt, and M. Kneissl
11:00 HL 2.4 Towards InGaN-based light emitters with superior high-current performance — •Ansgar Laubsch, Matthias Sabathil, Werner Bergbauer, Martin Strassburg, Matthias Peter, Hans Lugauer, Tobias Meyer, Joachim Wagner, Norbert Linder, Klaus Streubel, and Berthold Hahn
  11:15 15 min. break
11:30 HL 2.5 Heterostructure design optimisation of deep (In)AlGaN ultraviolet light emitting diodes — •T. Sembdner, T. Kolbe, A. Knauer, V. Küller, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl
11:45 HL 2.6 Barrier alloy composition and polarization control in nitride light emitters — •Christoph Hums, Aniko Gadanecz, Armin Dadgar, Jürgen Bläsing, Alexander Franke, Thomas Hempel, Jürgen Christen, and Alois krost
12:00 HL 2.7 Phonon-assisted contributions to the Auger losses in InGaN quantum wells — •Bernhard Pasenow, Stephan W. Koch, Jörg Hader, and Jerome V. Moloney
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