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HL: Fachverband Halbleiterphysik

HL 33: Quantum wires: preparation and characterization

HL 33.4: Talk

Wednesday, March 25, 2009, 14:45–15:00, BEY 81

Fabrication of longitudinal silicon nanowire heterostructures for implementation in field effect transistors — •Andre Heinzig and Walter M. Weber — Namlab GmbH, D-01187 Dresden

Continuous down scaling of field effect transistors will eventually lead to fabrication and performance related difficulties. In this respect, Schottky contact nanowire FETs are an interesting alternative for post-CMOS applications. Longitudinal metal-semiconductor-metal heterostructures are particularly interesting, since homogeneous and well defined Schottky junctions can be created. These are necessary to ensure a reliable device performance. A process for synthesizing such heterostructures has been developed by the silicidation of silicon nanowires with nickel. In particular, radial and longitudinal silicidation schemes have been established by applying self-aligned techniques. Both methods will be assessed to provide a customized metallic segment length with sharp interfaces in the nanometer scale. Finally, the fabrication of nanowire FETs based on nanowire heterostructures will be shown.