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HL: Fachverband Halbleiterphysik
HL 40: ZnO: preparation and characterization III
HL 40.10: Talk
Thursday, March 26, 2009, 12:15–12:30, BEY 118
Electron Spin Resonance measurements on ZnMgO thin films grown by plasma assisted molecular beam epitaxy — •Thomas A. Wassner1, Bernhard Laumer1, Jochen Bruckbauer1, Martin S. Brandt1, Martin Stutzmann1, and Martin Eickhoff2 — 1Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany — 2I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
ZnO and Zn1−xMgxO thin films were grown epitaxially on (0001)-plane sapphire by plasma assisted molecular beam epitaxy (PAMBE). The obtained thin films were investigated by electron spin resonance (ESR) at a temperature of 4K. In ZnO, an ESR signal with a g-value of about 1.955 was observed. By comparison with the literature, the observed g-value may point to a shallow donor, e.g. In or Al. The intensity of this resonance can be significantly increased by above band-gap illumination and remains almost constant for more than 30 min after stopping the illumination. In Zn1−xMgxO the g-value of this resonance systematically shifts to higher values with increasing Mg content, accompanied by an attenuated angular dependence of the line position.