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Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 41: GaN: preparation and characterization II

Thursday, March 26, 2009, 09:30–13:00, BEY 154

09:30 HL 41.1 Growth delay in GaInN/GaN multi quantum wells — •Heiko Bremers, Lars Hoffmann, Holger Jönen, Uwe Rossow, and Andreas Hangleiter
09:45 HL 41.2 Spectrally and time resolved cathodoluminescence spectroscopy of AlN grown on sapphire by high-temperature MOVPE — •Martin von Kurnatowski, Barbara Bastek, Juergen Christen, Thomas Hempel, Outi Rentilä, Viola Küller, Frank Brunner, and Markus Weyers
10:00 HL 41.3 Control of MOVPE InGaN quantum dot density and emission wavelength and applications in light emitting structures — •Christian Tessarek, Timo Aschenbrenner, Stephan Figge, Joachim Kalden, Kathrin Sebald, Jürgen Gutowski, and Detlef Hommel
10:15 HL 41.4 Kathodolumineszenz-Mikroskopie an InGaN/GaN Pyramiden — •Frank Bertram, Sebastian Metzner, Jürgen Christen, Michael Jetter, Clements Wächter und Peter Michler
  10:30 15 min. break
10:45 HL 41.5 Transport freier Exzitonen in HVPE-GaN — •Martin Noltemeyer, Frank Bertram, Jürgen Christen, Tim Wenicke, Christian Hennig, Markus Weyers und Michael Kneissl
11:00 HL 41.6 Defect-related cathodoluminescence in ELOG GaN structures — •Ingo Tischer, Martin Schirra, Martin Feneberg, Rolf Sauer, Klaus Thonke, Thomas Wunderer, and Ferdinand Scholz
11:15 HL 41.7 Optical properties of GaN nanorods grown catalyst- and mask-free on r-plane sapphire — •Joachim Kalden, Kathrin Sebald, Moritz Seyfried, Tobias Voss, Jürgen Gutowski, Timo Aschenbrenner, Gerd Kunert, Carsten Kruse, Stefan Figge, and Detlef Hommel
11:30 HL 41.8 Optical and magnetic properties of Gd doped GaN — •Ole Hitzemann, Martin Kaiser, Enno Malguth, Markus R. Wagner, Jan H. Schulze, Wolfgang Gehlhoff, Axel Hoffmann, Shalini Gupta, Ian T. Ferguson, Martin Röver, Dong-Du Mai, and Angela Rizzi
  11:45 15 min. break
12:00 HL 41.9 Swift heavy ion irradiation induced recrystallization of implanted GaN — •Anne-Katrin Nix, Sven Müller, Ulrich Vetter, Christina Trautmann, and Hans Hofsäss
12:15 HL 41.10 Role of the parasitic Mg3N2 phase in post-growth activation of p-doped Mg:GaN — •Björn Lange, Christoph Freysoldt, and Jörg Neugebauer
12:30 HL 41.11 Growth modes of thick InGaN films on GaN — •Martin Leyer, André Kruse, Joachim Stellmach, Markus Pristovsek, and Michael Kneissl
12:45 HL 41.12 Katalysator- und maskenfreies Wachstum von GaN-Nanosäulen — •Gerd Kunert, Timo Aschenbrenner, Carsten Kruse, Stephan Figge, Detlef Hommel, Marco Schowalter und Andreas Rosenauer
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