Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 48: Poster 2
HL 48.63: Poster
Thursday, March 26, 2009, 15:00–17:30, P2
Self-assembled lateral GaAs quantum dot molecules — •Lijuan Wang1, Armando Rastelli2, Suwit Kiravittaya1, Mohamed Benyoucef2, and Oliver G. Schmidt2 — 1Max-Planck-Institut für Festkörperforschung,Heisenbergstr. 1, D-70569 Stuttgart, Germany — 2Institute for Integrative Nanosciences, IFW Dresden,Helmholtzstr. 20, D-01069 Dresden, Germany
Semiconductor quantum dot molecules (QDMs) is an exciting area of research since they are ideal candidates for the possible implementation of quantum gates for quantum computation. Two main classes of QDMs have been explored, i.e. vertical and lateral QDMs according to the spatial arrangement of two quantum dots (QDs) composing a QDM. Here we demonstrate that using a multi-step growth technique, strain-free GaAs/AlGaAs lateral QDMs can be created. The QDMs are formed by filling two laterally spaced AlGaAs holes with GaAs.
The optical properties of such QDMs and single GaAs QDs grown in a similar way are characterized by photoluminescence. Different QDMs show similar spectral features. Because of fluctuations inherent in the self-assembled growth, the two QDs composing a QDM are generally not identical and thus their mutual coupling is tuned by an external electric field parallel to the QDM axis. The comparison between the emission of single QD and QDMs in a lateral electric field indicates the existence of lateral coupling.