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Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.22: Poster

Monday, March 23, 2009, 14:30–17:00, P2

MOVPE of semipolar GaN on m-plane sapphire — •M. Frentrup1, S. Ploch1, M. Pristovsek1 und M. Kneissl1,21TU Berlin, EW 6-1,Institut für Festkörperphysik, Hardenbergstr.36, 10623 Berlin, Germany — 2Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str.4, 12489 Berlin, Germany

InGaN multiple quantum well (MQW) light emitting diodes on c-plane GaN suffer piezoelectric and spontaneous polarization effects. These effects lead to the well known quantum confined stark effect (QCSE), which causes a reduction of the radiative recombination efficiency. Theoretical calculations have predicted that for certain semi-polar surfaces a strong reduction of the QCSE can be expected. Possible candidates for semi-polar surfaces are e.g. the {1011}, {2112} and {1013}. We have investigated the growth of semi-polar GaN on (1010) sapphire (m-plane) with metal organic vapor phase epitaxy (MOVPE). The epitaxy of nitrides on sapphire consists of three different steps - nitridation, nucleation, and buffer growth. The surface temperature for the different steps, especially for the nitridation was varied in the range between 530C and 1100C. We have also varied the nucleation temperature between 500C and 700C. The GaN growth was characterized by in-situ spectral reflectance and wafer curvature. The samples were characterized ex-situ by X-ray diffraction, AFM and photoluminescence.

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