Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.56: Poster

Monday, March 23, 2009, 14:30–17:00, P2

Artifical structuring of Cu₂O by wet chemical etching — •Julian Benz, Daniel Reppin, Swen Graubner, Torsten Henning, and Peter J. Klar — Institute of Experimental Physics I, Justus-Liebig University Gießen, Germany

Cuprous oxide layers of about 350 nm were artificially structured by means of photolithography and wet chemical etching. We used patterns of different sizes and investigated different etchants. To determine the etch rates and the aspect ratio we used atomic force microscopy. Wet chemical etching was employed to artificial structurize Cu₂O/ZnO heterostructures to investigate the p-n-junction. The results of the different etchants and different etch concentrations are discussed respectively.