Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 9: Poster 1
HL 9.61: Poster
Monday, March 23, 2009, 14:30–17:00, P2
Photoluminescence properties of ZnS single crystals and CVD thin films — •Melanie Pinnisch1, Joachim Sann1, Oliver Graw1, Stefan Lautenschläger1, Markus Wagner2, Jan-Hindrik Schulze2, Axel Hoffmann2, and Bruno K. Meyer1 — 1I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany — 2Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin,, Germany
ZnS with its large bandgap of 3.6 eV at room temperature is a promising candidate for optoelectronic applications in the blue and near UV. However, the fundamentals of the material have not been investigated properly. Neither acceptor nor donor bound exciton recombinations have been properly identified so far. In this work we report on low temperature and time resolved photoluminescence properties of ZnS single crystals grown by seeded vapour transport. By comparing the recombination energies of the PL-spectra with theoretical effective-mass-approximation-values we try to assign the luminescences to specific crystal defects. Finally we compare the results to photoluminescence data from ZnS CDV thin films grown on GaP- or Si-substrates.