Dresden 2009 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 23: Magnetic Thin Films II
MA 23.12: Vortrag
Mittwoch, 25. März 2009, 17:30–17:45, HSZ 04
Epitaxial and layer-by-layer growth of EuO thin films on YSZ (001) using MBE distillation — •Ronny Sutarto1, Simone G. Altendorf1, Beatrice Coloru1, Marco Moretti Sala1, Tim Haupricht1, Chun Fu Chang1, Zhiwei Hu1, Christian Schüßler-Langeheine1, Nils Hollman1, Harald Kierspel1, Hui-Huang Hsieh2, Hong-Ji Lin3, Chien-Te Chen3, and Liu Hao Tjeng1 — 1II. Physikalisches Institut, Universität zu Köln, Zülplicher Str. 77, 50937 Köln, Germany — 2Chung Cheng Institute of Technology, National Defense University, Taoyuan 335, Taiwan — 3National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu 30077, Taiwan
We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia YSZ (001). The use of the Eu-distillation process during the molecular-beam-epitaxy (MBE) assisted growth enables the consistent achievement of stoichiometry. We have also succeeded in growing the films in a layer-by-layer fashion by fine tuning the Eu vs. oxygen deposition rates. The initial stages of growth involves the limited supply of oxygen from the YSZ substrate, but the EuO stoichiometry can still be well maintained. The films grown were sufficiently smooth so that the capping with a thin layer of aluminium was leak tight and enabled ex-situ experiments free from trivalent Eu species. The findings were used to obtain recipes for better epitaxial growth for EuO on MgO (001).