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Dresden 2009 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 40: Poster II: Bio- and Molecular Magnetism (1-9); Magnetic Coupling Phenomena/Exchange Bias (10-15); Magnetic Particlicles and Clusters (16-29); Micro and Nanostructured Magnetic Materials (30-51); Multiferroics (52-64); Spin Injection in Heterostructures (65-67); Spin-Dyn./Spin-Torque (68-93); Spindependent Transport (94-108)

MA 40.99: Poster

Freitag, 27. März 2009, 11:00–14:00, P1A

In-situ Preparation and Characterization of Tailored Magnetic NanocontactsStephen Krzyk, Ajit Patra, •Andre Bisig, Mathias Kläui, and Ulrich Rüdiger — Fachbereich Physik, Universität Konstanz, 78457 Konstanz

It has been shown that magnetoresistance measurements can be used to investigate domain walls spin structure and pinning characteristics [1], and that the type and pinning behavior of domain walls is strongly dependant on the geometry of the investigated structures [2]. So far, the accessible lateral size regime has been limited by the finite resolution of the lithographic preparation process. An innovative approach to overcome this limitation and leading down to atomic size of a contact is the electromigration technique [3].

We use a combination of electron- and focussed-ion-beam lithography to pre-pattern nanoscale ring-structures with notches on a Si3N4 surface, and Permalloy (Ni80Fe20) films are grown on the structures in UHV. Controlled electromigration is used to reduce the size of the notch. By alternating deposition and electromigration, the resistance and correspondingly the cross-section of the notch can be reversibly changed by several orders of a magnitude. In-plane magnetic fields are used to nucleate and move magnetic domain walls in the nanostructure and magnetoresistance measurements are used to probe the influence of the notch geometry on the behavior of the domain wall.

[1] D. Bedau et al., J. Appl. Phys. 101, 09F509 (2007).

[2] M. Laufenberg et al., Appl. Phys. Lett. 88, 052507 (2006).

[3] R. Hoffmann et. al., Appl. Phys. Lett. 93, 043118 (2008).

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