Dresden 2009 – scientific programme

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MM: Fachverband Metall- und Materialphysik

MM 3: Mechanical Properties I

MM 3.2: Talk

Monday, March 23, 2009, 10:45–11:00, IFW B

Experimental based calibration for strain measurement in silicon with Raman spectroscopy — Natallia Zhlobich, Martin Küttner, Henning Heuer, and •Jörg Opitz — Fraunhofer IZFP-D, Dresden, Germany

Raman Spectroscopy becomes more and more important in research and development i.e. for pharmaceutical, chemical or biological applications. Also in semiconductor or photovoltaic industries Raman spectroscopy on Silicon will be an important method to measure strain and chemical-physical interactions. To increase spatial resolution for near field Raman spectroscopy with a basically weak intensity an optimization problem between fast measurements versus perfect peak quality has to be solved. Different parameters of the experiment are used to improve the quality of Raman peaks and to decrease the exposure time. Applied stress in the samples is calculated with help of a theoretical model for 4 point bending. The dependance between mechanical stress and Raman shift is obtained. The influence of different parameters of the experiment on the interpretation of Raman data is discussed. The results of this work will be used in the further developing of a Scanning Near-field Optical Microscopy technique for stress mapping with high spatial resolution.