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O: Fachverband Oberflächenphysik
O 34: Focused Session: Epitaxial Graphene IV
O 34.6: Talk
Wednesday, March 25, 2009, 12:15–12:30, SCH 251
Imaging atomic structure of graphene on metallic substrates — •Mikhail Fonin1, Ole Zander1, Sönke Voss1, Ulrich Rüdiger1, and Yury S. Dedkov2 — 1Fachbereich Physik, Universität Konstanz, 78457 Konstanz — 2Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin, Germany
Unusual transport properties of graphene, a single monolayer of graphite, have stimulated an intense activity for developing graphene-based nanoelectronics. From the technological point of view the observation of large carrier mobilities and ballistic transport up to room temperature are the most intriguing features. However, the potential for applicable graphene-based electronics rests not only on device performance but also on the ability to fabricate uniform graphene layers on large length scales. Unlike exfoliation techniques, epitaxially grown graphene layers offer a realistic solution for large-scale fabrication and patterning of graphene structures.
In this study, growth and structure of graphene on Ni(111) and Rh(111) has been investigated by means of scanning tunneling microscopy. We show that graphene prepared on Ni(111) forms a flat monolayer exhibiting remarkably large-scale continuity of carbon lattice over terraces and containing only a very low density of defects. Whereas prepared on Rh(111), graphene forms a nanomesh. Depending on the preparation conditions graphene layer on Rh(111) shows either a single phase and very good rotational alignment or a multiphase with coexisting different superstructures.