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DPG

Dresden 2009 – scientific programme

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O: Fachverband Oberflächenphysik

O 7: Semiconductor substrates

Monday, March 23, 2009, 11:15–13:00, SCH A315

11:15 O 7.1 Electronic structure of the cleaved non-polar GaN(1100) surface — •P. Löptien, M. Bertelli, M. Wenderoth, R.G. Ulbrich, A. Rizzi, J. Malindretos, M.C. Righi, A. Catellani, A. Ferretti, and L.C. Samos
11:30 O 7.2 Impurity induced charge density oscillations in the π-bonded chains of the Si(111)-2×1 surface — •Karolin Löser, Martin Wenderoth, Thomas K. A. Spaeth, Jens K. Garleff, and Rainer G. Ulbrich
11:45 O 7.3 Epitaxial growth of micrometer-sized Cu-pyramides on Silicon — •Susanne Seyffarth and Hans-Ulrich Krebs
12:00 O 7.4 MOVPE preparation of Si(100) surfaces for III-V hetero epitaxy — •Henning Döscher, Peter Kleinschmidt, Sebastian Brückner, Anja Dobrich, Christian Höhn, and Thomas Hannappel
12:15 O 7.5 Ge nanoisland growth on the In/Si(112)-"(3.5×1)" surface — •Moritz Speckmann, Thomas Schmidt, Jan Ingo Flege, Torsten Wilkens, and Jens Falta
12:30 O 7.6 Structural properties of sub-monolayer InAs-coverages on GaAs(001) — •Christopher Prohl, Britta Höpfner, Jan Grabowski, Holger Eisele, and Mario Dähne
12:45 O 7.7 Structural properties of the InAs/GaAs system before and after quantum dot formation. — •Britta Höpfner, Christopher Prohl, Jan Grabowski, Holger Eisele, and Mario Dähne
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