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TT: Fachverband Tiefe Temperaturen
TT 8: Postersession Transport: Graphene and Carbon Nanotubes
TT 8.5: Poster
Monday, March 23, 2009, 13:00–16:45, P1B
Trans-conductance of back-gated and top-gated multi-walled carbon nanotube field-effect transistors — •asaf avnon1 and jaako leppäniemi2 — 1Freie universität Berlin,Berlin,Germany — 2University of Jyväskylä, Jyväskylä, Finland
In this study we have mapped the gate response of thin multi-walled carbon nanotubes (MWNT)-based field-effect transistors (FET). We observe advancing hysteresis in gate-response of back-gated MWCNT FETs and retarding hysteresis in top- gated MWCNT FETs. The hysteresis could be a result of mobile charge carriers trapped in the insulator as it diminishes at low temperatures both in devices with a top-gate and a back-gate. The hysteresis in the gate response could be utilized in future memory applications.