Bonn 2010 – wissenschaftliches Programm
HK 36.52: Poster
Mittwoch, 17. März 2010, 14:00–16:00, HG Aula
Studies on Monolithic Active Pixel Sensors being irradiated with ionizing, non-ionizing and combined radiation doses* — Sarah Ottersbach1, Dennis Doering1, Melissa Domachowski1, •Michael Deveaux1, Christian Müntz1, Joachim Stroth1, and Franz M. Wagner2 — 1Institut für Kernphysik Goethe Universität, Frankfurt am Main — 2Forschungsneutronenquelle Heinz-Maier-Leibnitz (FRM II), Technische Universität München
CMOS Monolithic Active Pixel Sensors (MAPS) provide an outstanding combination of excellent spatial resolution (few µ m) and very light, thin ( <0.05 % X0) material budget. Their use is foreseen in the vertex detectors of various experiments in heavy ion and particle physics. Among them is CBM. In order to handle the harsh radiation doses expected in this experiment, the CBM-MVD collaboration undertakes intense R&D on the radiation hardness of MAPS.
So far, the radiation hardness of MAPS had been examined for ionizing and non-ionizing radiation separately, while a potential interplay between both radiation variations was neglected. The work presented searched for such an interplay by means of comparing the properties of X-ray and neutron irradiated sensors with the properties of sensors being irradiated with both particle species. The results of the studies will be discussed and evidences for the presence of a moderately strong, so far unknown source of leakage currents in MAPS will be shown.
*supported by BMBF (06FY173l;06FY9099I) and GSI (F&E)