Bonn 2010 – scientific programme
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T: Fachverband Teilchenphysik
T 63: Strahlenhärte von Halbleiterdetektoren I
T 63.6: Talk
Tuesday, March 16, 2010, 18:00–18:15, HG ÜR 6
Characterization and spice simulation of a single-sided, p+ on n silicon microstrip detector before and after low-energy photon irradiation — •Jiaguo Zhang1,2, Robert Klanner1, and Eckhart Fretwurst1 — 1Institute for Experimental Physics, Detector Laboratory, University of Hamburg, Hamburg 22761 — 2Marie Curie Intial Training Network (MC-PAD)
As preparation for the development of silicon detectors for the harsh radiation environment at the European XFEL (up to 1 GGY 12 keV X-rays) p+ on n silicon microstrip detectors were characterized as function of dose. The measurements, which include dark current, coupling capacitance, interstrip capacitance and interstrip resistance, are compared to a detailed SPICE model, so that the performance for particle detection can be estimated.