Regensburg 2010 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 6: Focus Session: High-k and high mobility materials for CMOS
DF 6.6: Topical Talk
Dienstag, 23. März 2010, 12:45–13:10, H11
Si wafer engineering: single crystalline oxides as buffers for the integration of alternative semiconductors — •Alessandro Giussani1, Peter Zaumseil1, Olaf Seifarth1, Markus Andreas Schubert1, Peter Storck2, and Thomas Schroeder1 — 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 Muenchen, Germany
Single crystalline oxides are the object of intensive research as buffers for the integration of functional semiconductors on the mature Si platform. The interest is motivated on the one hand by the demand for cheap semiconductor substrates (i.e. Ge & GaN) on Si, and on the other hand by CMOS semiconductor (i.e Si & Ge)-on-insulator technologies. The main advantage of the oxide templates is the high flexibility to tune important epitaxy parameters of the overgrowing semiconductor. Bixbyite-based heterostructures are used by our group for Si, Ge and GaN integration. In the talk, special attention will be dedicated to solid solutions of (Pr2O3)1-x(Y2O3)x (x = 0-1) heterostructures which can be used for the growth of lattice-matched and -mismatched SiGe systems. As an example, pure Ge thin film heterostructures on cubic Pr2O3 are demonstrated. The grown Ge epilayers are single crystalline, atomically smooth and free of impurities from the buffer and Si. Moreover, a complex characterization of the Ge epilayer defect structure is presented by a combination of XRD and TEM.