Regensburg 2010 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 2: Devices I

HL 2.2: Vortrag

Montag, 22. März 2010, 10:30–10:45, H13

Advanced device performance of TFETs by embedded silicon germanium alloys — •Helmut Lochner, Peter Iskra, Martin Schlosser, Dorota Kulaga-Egger, Torsten Sulima, and Walter Hansch — Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg

Due to increasing problems by downscaling conventional transistor concepts like the MOSFET, the semiconductor industry is searching for promising new device technologies, such as the Tunnel-FET. Making a virtue out of necessity the TFET takes advantage of the band to band tunneling effect, which is constricting conventional devices. Although the leakage currents can be significant reduced, the ON-current requested by the ITRS (International Technology Roadmap for Semiconductors) cannot be fulfilled. In order to solve this demerit, several solutions are discussed. An efficient way to minimize the deficit is to integrate SiGe alloys in the tunneling region. On the one hand the smaller band gap of SiGe yields in a smaller tunneling gap and consequently in a higher tunnel probability. On the other hand the strained SiGe layer acts as a diffusion barrier. As a consequence the maximum doping concentration at the tunnel region and the sharpness of the doping profile are increasing hand by hand with the resulting ON current. To verify these effects, several TFETs featuring different alloys were fabricated. Electrical measurements like input and output characteristics are confirming these conclusions. The theoretical boarders are pointed out by means of numeric simulations.