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DPG

Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.41: Poster

Dienstag, 23. März 2010, 18:30–21:00, Poster B1

Preparation of CuInS2 by sulfurization of CuIn samples — •Alexandra Dombrowa, Carsten Lehmann, and Christian Pettenkofer — Helmholtz-Zentrum Berlin, Berlin, Deutschland

In search for a substitute for the heavy metal Cd in thin film solar cells based on p doped CuInS2 and n doped ZnO it is proposed to use ZnS instead of CdS as buffer layer material [1,2]. By applying a MOMBE process based on diethylzinc and water a ZnS buffer layer formed on an CuInS2(112) topped with CuS-segregations before epitaxial ZnO growth took place. This ZnO-ZnS-CIS interface yielded a very promising band aligment for photovoltaic applications [2]. For further band aligment investigations, which are presented in a separate talk entitled ’Band alignment studies of ZnO-ZnS-CIS interfaces’, we studied polycristalline CIS films prepared in-situ by sulfurization of CuIn films. We present the results of our in-situ preparation and anaylsis of on various substrates. CuIn substrate films with a thickness of 10-100nm were prepared in-situ by MBE on Mo foil and epitaxial GaAs (111) and (100) substrates. Additionally, we used production-line quality CuIn films of 1-2 µm thickness prepared ex-situ by sputtering. The substrates and the sulfurized samples were investigated in-situ by XPS and UPS. Comparing the electrical and electronic properties of ZnS/ZnO interfaces prepared by MOMBE to epitaxially interfaces we discuss the implications with respect to an in-line process for the fabrication of the thin film solar cell devices. [1] M. Bär, et. al., Journal of Applied Physics 99 (2006) [2] S. Andres, et. al., Thin Solid Films 518 (2009)

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