Dresden 2011 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 1: Dielectric and ferroelectric thin films 1

DF 1.1: Invited Talk

Monday, March 14, 2011, 10:15–10:55, MÜL Elch

Design and Fabrication of Quantum-Enhanced Capacitors for CMOS-Applications — •Jochen Mannhart¹, Thilo Kopp¹, Christoph Richter¹, Lu Li², and Ashoori Ray² — ¹Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg University, Augsburg, Germany — ²Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

As the miniaturization of electronic circuits reaches the quantum scale, new possibilities emerge for the realization of novel, quantum electronic devices which exploit the quantum nature of solids. Here we show that by using quantum effects, the capacitance of electronic devices can be optimized to a great extent, which is a key to the further miniaturization of electronic components.

It is shown that by optimizing the material of the conducting electrodes, the capacitance of capacitors reaching the quantum regime can be substantially enhanced or reduced. Dielectric capacitors with negative total capacitances are suggested and their properties analyzed. Resulting perspectives to enhance the performance of electronic devices are discussed.