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DS: Fachverband Dünne Schichten

DS 1: Invited -- Mitzi

DS 1.1: Invited Talk

Monday, March 14, 2011, 10:15–11:00, GER 37

High-performance liquid- and vacuum-processed CZTSSe photovoltaic devices — •David B. Mitzi¹, Oki Gunawan¹, Teodor K. Todorov¹, Aaron R. Barkhouse¹, Kejia Wang¹, Byungha Shin¹, Richard Haight¹, Supratik Guha¹, Kathleen B. Reuter¹, Thomas Goislard de Monsabert¹, S. Jay Chey¹, and Andrew J. Kellock² — ¹IBM T. J. Watson Research Center, Yorktown Heights, NY, USA — ²IBM Almaden Research Center, San Jose, CA, USA

While thin-film CdTe and CIGS (Cu-In-Ga-Se) photovoltaic technologies are increasing market share due to their cost competitiveness and high performance, reliance on the expensive and/or scarce elements Ga, In and Te, or the heavy metal Cd, has presented a potential obstacle to the target of terawatt deployment using these materials. The kesterites, Cu₂ZnSnS_4−ySe_y (CZTSSe), are considered a promising alternative because of similar electronic properties to the two leading technologies and low-cost, readily-available constituents. This talk will focus on recent developments in fabricating high-performance CZTSSe devices. First, a simple particle-based liquid approach has been employed to prepare photovoltaic devices with a glass/Mo/CZTSSe (y > 2)/CdS/i-ZnO/ITO structure and with power conversion efficiencies of >9.5 %, a record for the kesterites. Using a vacuum-based coevaporation approach, power conversion efficiencies of as high as 7