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DS: Fachverband Dünne Schichten
DS 11: Thin Film Characterisation: Structure Analysis and Composition (XRD, TEM, XPS, SIMS, RBS, ...) IV
DS 11.1: Talk
Monday, March 14, 2011, 15:45–16:00, GER 38
Modeling of the relaxation kinetics of Phosphorus doped metastable tensile strained Si:C alloys — •Felix Ulomek1, Ina Ostermay2, Thorsten Kammler2, and Volker Mohles1 — 1Institut für Metallkunde und Metallphysik, RWTH Aachen — 2GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Wilschdorfer Landstraße 101, 01109 Dresden
In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C are of interest. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4E20 At/cm3 have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution x-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. We model the macroscopic relaxation behavior by statistical simulations and extrapolate the behaviors for different relaxation conditions. The resulting activation energies, which are fit parameters in this model, are compared to values of atomistic simulations.